SANTA
CRUZ, Calif. — Adding to its patent portfolio, Sequence
Design has been awarded U.S. patents for RTL power analysis
and extraction of parasitic mutual inductance. Technology
described in the patents has been integrated into Sequence
products.
U.S. patent 6,598,209, "RTL power
analysis using gate-level cell power models," lets users
estimate power at the register-transfer level using standard
gate-level libraries. The author is Sergei Sokolov, Sequence
principal engineer. Sequence has incorporated this technology
into PowerTheather, a tool for RTL and gate-level power estimation.
U.S. patent 6,643,831, "Method and
system for extraction of parasitic interconnect impedance
including inductance," describes a method in which parasitic
impedances, including inductance, can be extracted for an
IC to allow more accurate modeling and timing analysis.
The patent's authors are K.J. Chang,
professor at Taiwan's National Tsing Hua University; Li-Fu
Chang and Rob Mathews of Sequence; and Martin Walker, founder
of Frequency Technology. The new patent complements a former
Sequence patent on inductance extraction methods. Technology
from both patents has been incorporated into Columbus-AMS,
a 3D RLCK extractor for mixed-signal, analog, memory, and
full-custom digital designs.
About Sequence
Sequence Design, Inc. enables system-on-chip
designers to bring higher-performance and lower-power integrated
circuits quickly to fabrication. Sequence's power and signal
integrity software give its more than 100 customers the competitive
advantage they need to excel in aggressive technology markets,
despite demanding complexity and time-to-market issues of
nanometer design.
Sequence has worldwide development and field service operations.
The company was recently named by Reed Electronics as one
of the top 50 companies to watch in the electronics industry.
Sequence is privately held. Sequence is a member of Cadence
Design Systems' Connections(TM) and
Mentor Graphics' Open Door(TM)partnership
programs. Additional information is available at .
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